tsdf1220/tsdf1220r/tsdf1220w/TSDF1220RW vishay telefunken www.vishay.com rev. 6, 30-jun-00 1 (6) document number 85066 silicon npn planar rf transistor electrostatic sensitive device. observe precautions for handling. applications for low noise applications such as preamplifiers, mix- ers and oscillators in analog and digital tvsystems (e.g., satellite tuners) up to microwave frequencies. features low power applications very low noise figure high transition frequency f t = 12 ghz 13 579 21 4 3 94 9279 tsdf1220 marking: f20 plastic case (sot 143) 1 = collector, 2 = emitter, 3 = base, 4 = emitter 95 10831 2 1 43 94 9278 tsdf1220r marking: 20f plastic case (sot 143r) 1 = collector, 2 = emitter, 3 = base, 4 = emitter 2 1 3 13 653 4 13 566 tsdf1220w marking: wf2 plastic case (sot 343) 1 = collector, 2 = emitter, 3 = base, 4 = emitter 2 1 3 4 13 566 13 654 TSDF1220RW marking: w2f plastic case (sot 343r) 1 = collector, 2 = emitter, 3 = base, 4 = emitter absolute maximum ratings t amb = 25 c, unless otherwise specified parameter test conditions symbol value unit collector-base voltage v cbo 9 v collector-emitter voltage v ceo 6 v emitter-base voltage v ebo 2 v collector current i c 40 ma total power dissipation t amb 60 c p tot 200 mw junction temperature t j 150 c storage temperature range t stg 65 to +150 c
tsdf1220/tsdf1220r/tsdf1220w/TSDF1220RW vishay telefunken www.vishay.com rev. 6, 30-jun-00 2 (6) document number 85066 maximum thermal resistance t amb = 25 c, unless otherwise specified parameter test conditions symbol value unit junction ambient on glass fibre printed board (25 x 20 x 1.5) mm 3 plated with 35 m cu r thja 450 k/w electrical dc characteristics t amb = 25 c, unless otherwise specified parameter test conditions symbol min typ max unit collector cut-off current v ce = 12 v, v be = 0 i ces 100 a collector-base cut-off current v cb = 10 v, i e = 0 i cbo 100 na emitter-base cut-off current v eb = 1 v, i c = 0 i ebo 2 a collector-emitter breakdown voltage i c = 1 ma, i b = 0 v (br)ceo 6 v collector-emitter saturation voltage i c = 30 ma, i b = 3 ma v cesat 0.1 0.5 v dc forward current transfer ratio v ce = 5 v, i c = 20 ma h fe 50 100 150 electrical ac characteristics t amb = 25 c, unless otherwise specified parameter test conditions symbol min typ max unit transition frequency v ce = 5 v, i c = 20 ma, f = 1 ghz f t 12 ghz collector-base capacitance v cb = 1 v, f = 1 mhz c cb 0.3 pf collector-emitter capacitance v ce = 1 v, f = 1 mhz c ce 0.35 pf emitter-base capacitance v eb = 0.5 v, f = 1 mhz c eb 0.5 pf noise figure v ce = 5 v, i c = 3 ma, z s = z sopt , z l = 50 , f = 2 ghz f 1.2 db power gain v ce = 5 v, i c = 20 ma, z s = z sopt , z l = 50 , f = 2 ghz g pe 14 db transducer gain v ce = 5 v, i c = 20 ma, z 0 = 50 , f = 2 ghz ? s 21e ? 2 12.5 db third order intercept point at output v ce = 5 v, i c = 20 ma, f = 2 ghz ip 3 22 dbm
tsdf1220/tsdf1220r/tsdf1220w/TSDF1220RW vishay telefunken www.vishay.com rev. 6, 30-jun-00 3 (6) document number 85066 typical characteristics (t amb = 25 c unless otherwise specified) 0 50 100 150 200 250 300 0 20 40 60 80 100 120 140 160 t amb ambient temperature ( c ) 96 12159 p total power dissipation ( mw ) tot figure 1. total power dissipation vs. ambient temperature 0 4 8 12 16 20 0 5 10 15 20 25 30 i c collector current ( ma ) 14288 f transition frequency ( ghz ) t v ce =5v f=2ghz v ce =3v f=1ghz figure 2. transition frequency vs. collector current 0 0.1 0.2 0.3 0.4 0.5 012345 v cb collector base voltage ( v ) 14289 c collector base capacitance ( pf ) cb f=1mhz figure 3. collector base capacitance vs. collector base voltage 0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 i c collector current ( ma ) 14290 f noise figure ( db ) v ce =5v f=1ghz z s =50 figure 4. noise figure vs. collector current
tsdf1220/tsdf1220r/tsdf1220w/TSDF1220RW vishay telefunken www.vishay.com rev. 6, 30-jun-00 4 (6) document number 85066 dimensions of tsdf1220 in mm 96 12240 dimensions of tsdf1220r in mm 96 12239
tsdf1220/tsdf1220r/tsdf1220w/TSDF1220RW vishay telefunken www.vishay.com rev. 6, 30-jun-00 5 (6) document number 85066 dimensions of tsdf1220w in mm 96 12237 dimensions of TSDF1220RW in mm 96 12238
tsdf1220/tsdf1220r/tsdf1220w/TSDF1220RW vishay telefunken www.vishay.com rev. 6, 30-jun-00 6 (6) document number 85066 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay-telefunken products for any unintended or unauthorized application, the buyer shall indemnify vishay-telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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